{"product_id":"molecular-beam-epitaxy-isbn-9781119355014","title":"Molecular Beam Epitaxy","description":"\u003cp\u003e\u003cb\u003eCovers both the fundamentals and the state-of-the-art technology used for MBE\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eWritten by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.\u003c\/p\u003e \u003cp\u003e\u003ci\u003eMolecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics \u003c\/i\u003eis presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet\/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.\u003c\/p\u003e \u003cul\u003e \u003cli\u003eIncludes chapters on the fundamentals of MBE\u003c\/li\u003e \u003cli\u003eCovers new challenging researches in MBE and new technologies \u003c\/li\u003e \u003cli\u003eEdited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners\u003c\/li\u003e \u003cli\u003ePart of the Materials for Electronic and Optoelectronic Applications series\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003e\u003ci\u003eMolecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics \u003c\/i\u003ewill appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.\u003c\/p\u003e \u003cp\u003eList of Contributors xv\u003c\/p\u003e \u003cp\u003eSeries Preface xix\u003c\/p\u003e \u003cp\u003ePreface xxi\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart I Fundamentals of MBE 1\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1. History of MBE 3\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eTom Foxon\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e1.1 Introduction 3\u003c\/p\u003e \u003cp\u003e1.2 The MBE Process 4\u003c\/p\u003e \u003cp\u003e1.3 Controlled n and p Doping 10\u003c\/p\u003e \u003cp\u003e1.4 Modified Growth Procedures 10\u003c\/p\u003e \u003cp\u003e1.5 Gas-Source MBE 11\u003c\/p\u003e \u003cp\u003e1.6 Low-Dimensional Structures 11\u003c\/p\u003e \u003cp\u003e1.7 III–V Nitrides, Phosphides, Antimonides and Bismides and Other Materials 13\u003c\/p\u003e \u003cp\u003e1.8 Early MBE-Grown Devices 18\u003c\/p\u003e \u003cp\u003e1.9 Summary 18\u003c\/p\u003e \u003cp\u003eAcknowledgments 18\u003c\/p\u003e \u003cp\u003eReferences 19\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2. General Description of MBE 23\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYoshiji Horikoshi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction 23\u003c\/p\u003e \u003cp\u003e2.2 High-Vacuum Chamber System 24\u003c\/p\u003e \u003cp\u003e2.3 Atomic and Molecular Beam Sources 25\u003c\/p\u003e \u003cp\u003e2.4 Measurement of MBE Growth Parameters 28\u003c\/p\u003e \u003cp\u003e2.5 Surface Characterization Tools for MBE Growth 31\u003c\/p\u003e \u003cp\u003e2.6 Summary 37\u003c\/p\u003e \u003cp\u003eAcknowledgments 37\u003c\/p\u003e \u003cp\u003eReferences 38\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3. Migration-Enhanced Epitaxy and its Application 41\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYoshiji Horikoshi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e3.1 Introduction 41\u003c\/p\u003e \u003cp\u003e3.2 Toward Atomically Flat Surfaces in MBE 42\u003c\/p\u003e \u003cp\u003e3.3 Principle of MEE 44\u003c\/p\u003e \u003cp\u003e3.4 Growth of GaAs by MEE 48\u003c\/p\u003e \u003cp\u003e3.5 Incommensurate Deposition and Migration of Ga Atoms 49\u003c\/p\u003e \u003cp\u003e3.6 Application of MEE Deposition Sequence to Surface Research 50\u003c\/p\u003e \u003cp\u003e3.7 Application of MEE to Selective Area Epitaxy 51\u003c\/p\u003e \u003cp\u003e3.8 Summary 54\u003c\/p\u003e \u003cp\u003eAcknowledgments 54\u003c\/p\u003e \u003cp\u003eReferences 55\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4. Nanostructure Formation Process of MBE 57\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eKoichi Yamaguchi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction 57\u003c\/p\u003e \u003cp\u003e4.2 Growth of Quantum Wells 58\u003c\/p\u003e \u003cp\u003e4.3 Growth of Quantum Wires and Nanowires 60\u003c\/p\u003e \u003cp\u003e4.4 Growth of Quantum Dots 64\u003c\/p\u003e \u003cp\u003e4.5 Conclusion 71\u003c\/p\u003e \u003cp\u003eReferences 72\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5. Ammonia Molecular Beam Epitaxy of III-Nitrides 73\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMicha N. Fireman and James S. Speck\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction 73\u003c\/p\u003e \u003cp\u003e5.2 III-Nitride Fundamentals 74\u003c\/p\u003e \u003cp\u003e5.3 Ammonia Molecular Beam Epitaxy 77\u003c\/p\u003e \u003cp\u003e5.4 Ternary Nitride Alloys and Doping 82\u003c\/p\u003e \u003cp\u003e5.5 Conclusions 86\u003c\/p\u003e \u003cp\u003eReferences 86\u003c\/p\u003e \u003cp\u003e\u003ci\u003eContents vii\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6. Mechanism of Selective Area Growth by MBE 91\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eKatsumi Kishino\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e6.1 Background 91\u003c\/p\u003e \u003cp\u003e6.2 Growth Parameters for Ti Mask SAG 92\u003c\/p\u003e \u003cp\u003e6.3 Initial Growth of Nanocolumns 94\u003c\/p\u003e \u003cp\u003e6.4 Nitrogen Flow Rate Dependence of SAG 95\u003c\/p\u003e \u003cp\u003e6.5 Diffusion Length of Ga Adatoms 96\u003c\/p\u003e \u003cp\u003e6.6 Fine Control of Nanocolumn Arrays by SAG 98\u003c\/p\u003e \u003cp\u003e6.7 Controlled Columnar Crystals from Micrometer to Nanometer Size 100\u003c\/p\u003e \u003cp\u003e6.8 Nanotemplate SAG of AlGaN Nanocolumns 101\u003c\/p\u003e \u003cp\u003e6.9 Conclusions and Outlook 103\u003c\/p\u003e \u003cp\u003eReferences 104\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart II MBE Technology for Electronic Devices Application 107\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7. MBE of III-Nitride Semiconductors for Electronic Devices 109\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eRolf J. Aidam, O. Ambacher, E. Diwo, B.-J. Godejohann, L. Kirste, T. Lim, R. Quay, and P. Waltereit\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e7.1 Introduction 109\u003c\/p\u003e \u003cp\u003e7.2 MBE Growth Techniques 110\u003c\/p\u003e \u003cp\u003e7.3 AlGaN\/GaN High Electron Mobility Transistors on SiC Substrate 118\u003c\/p\u003e \u003cp\u003e7.4 AlGaN\/GaN High Electron Mobility Transistors on Si Substrate 123\u003c\/p\u003e \u003cp\u003e7.5 HEMTs with Thin Barrier Layers for High-Frequency Applications 125\u003c\/p\u003e \u003cp\u003e7.6 Vertical Devices 130\u003c\/p\u003e \u003cp\u003eReferences 132\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8. Molecular Beam Epitaxy for Steep Switching Tunnel FETs 135\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eSalim El Kazzi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e8.1 Introduction 135\u003c\/p\u003e \u003cp\u003e8.2 TFET Working Principle 136\u003c\/p\u003e \u003cp\u003e8.3 III–V Heterostructure for TFETs 136\u003c\/p\u003e \u003cp\u003e8.4 MBE for Beyond CMOS Technologies 138\u003c\/p\u003e \u003cp\u003e8.5 Doping 139\u003c\/p\u003e \u003cp\u003e8.6 Tunneling Interface Engineering 142\u003c\/p\u003e \u003cp\u003e8.7 MBE for III–V TFET Integration 143\u003c\/p\u003e \u003cp\u003e8.8 Conclusions and Perspectives 146\u003c\/p\u003e \u003cp\u003eAcknowledgments 146\u003c\/p\u003e \u003cp\u003eReferences 147\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart III MBE for Optoelectronic Devices 149\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9. Applications of III–V Semiconductor Quantum Dots in Optoelectronic Devices 151\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eKouichi Akahane and Yoshiaki Nakata\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e9.1 Introduction: Self-assembled Quantum Dots 151\u003c\/p\u003e \u003cp\u003e9.2 Lasers Based on InAs Quantum Dots Grown on GaAs Substrates 152\u003c\/p\u003e \u003cp\u003e9.3 InAs QD Optical Device Operating at Telecom Band (1.55 μm) 158\u003c\/p\u003e \u003cp\u003e9.4 Recent Progress in QD Lasers 164\u003c\/p\u003e \u003cp\u003e9.5 Summary 165\u003c\/p\u003e \u003cp\u003eReferences 165\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10. Applications of III–V Semiconductors for Mid-infrared Lasers 169\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYuichi Kawamura\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction 169\u003c\/p\u003e \u003cp\u003e10.2 GaSb-Based Lasers 170\u003c\/p\u003e \u003cp\u003e10.3 InP-Based Lasers 170\u003c\/p\u003e \u003cp\u003e10.4 InAs-Based Lasers 173\u003c\/p\u003e \u003cp\u003e10.5 Conclusion 174\u003c\/p\u003e \u003cp\u003eReferences 174\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11. Molecular Beam Epitaxial Growth of Terahertz Quantum Cascade Lasers 175\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eHarvey E. Beere and David A. Ritchie\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction 175\u003c\/p\u003e \u003cp\u003e11.2 Epitaxial Challenges 179\u003c\/p\u003e \u003cp\u003eReferences 189\u003c\/p\u003e \u003cp\u003e\u003cb\u003e12. MBE of III-Nitride Heterostructures for Optoelectronic Devices 191\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eC. Skierbiszewski, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz- ̇ Zmuda, P. Wolny, and M. Sawicka\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e12.1 Introduction 191\u003c\/p\u003e \u003cp\u003e12.2 Low-Temperature Growth of Nitrides by PAMBE 192\u003c\/p\u003e \u003cp\u003e12.4 New Concepts of LDs with Tunnel Junctions 205\u003c\/p\u003e \u003cp\u003e12.5 Summary 206\u003c\/p\u003e \u003cp\u003eAcknowledgments 207\u003c\/p\u003e \u003cp\u003eReferences 207\u003c\/p\u003e \u003cp\u003e\u003cb\u003e13. III-Nitride Quantum Dots for Optoelectronic Devices 211\u003cbr\u003e\u003c\/b\u003e\u003ci\u003ePallab Bhattacharya, Thomas Frost, Shafat Jahangir, Saniya Deshpande, and Arnab Hazari\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e13.1 Introduction 211\u003c\/p\u003e \u003cp\u003e13.2 Molecular Beam Epitaxy of InGaN\/GaN Self-organized Quantum Dots 212\u003c\/p\u003e \u003cp\u003e13.3 Quantum Dot Wavelength Converter White Light-Emitting Diode 220\u003c\/p\u003e \u003cp\u003e13.4 Quantum Dot Lasers 223\u003c\/p\u003e \u003cp\u003e13.5 Summary and Future Prospects 229\u003c\/p\u003e \u003cp\u003eReferences 230\u003c\/p\u003e \u003cp\u003e\u003cb\u003e14. Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices 233\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eEric Tournie\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e14.1 Introduction 233\u003c\/p\u003e \u003cp\u003e14.2 Epitaxy of Antimonides: A Brief Historical Survey 235\u003c\/p\u003e \u003cp\u003e14.3 Molecular-Beam Epitaxy of Antimonide 236\u003c\/p\u003e \u003cp\u003e14.4 Outlook 243\u003c\/p\u003e \u003cp\u003eAcknowledgments 244\u003c\/p\u003e \u003cp\u003eReferences 244\u003c\/p\u003e \u003cp\u003e\u003cb\u003e15. III–V Semiconductors for Infrared Detectors 247\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eP. C. Klipstein\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e15.1 Introduction 247\u003c\/p\u003e \u003cp\u003e15.2 InAsSb XB\u003ci\u003en \u003c\/i\u003eDetectors 251\u003c\/p\u003e \u003cp\u003e15.3 T2SL XB\u003ci\u003ep \u003c\/i\u003eDetectors 255\u003c\/p\u003e \u003cp\u003e15.4 Conclusion 262\u003c\/p\u003e \u003cp\u003eAcknowledgments 262\u003c\/p\u003e \u003cp\u003eReferences 262\u003c\/p\u003e \u003cp\u003e\u003cb\u003e16. MBE of III–V Semiconductors for Solar Cells 265\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eTakeyoshi Sugaya\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e16.1 Introduction 265\u003c\/p\u003e \u003cp\u003e16.2 InGaP Solar Cells 266\u003c\/p\u003e \u003cp\u003e16.3 InGaAsP Solar Cells Lattice-Matched to GaAs 268\u003c\/p\u003e \u003cp\u003e16.4 InGaAsP Solar Cells Lattice-Matched to InP 271\u003c\/p\u003e \u003cp\u003e16.5 Growth of Tunnel Junctions for Multi-Junction Solar Cells 272\u003c\/p\u003e \u003cp\u003e16.6 Summary 277\u003c\/p\u003e \u003cp\u003eReferences 277\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart IV Magnetic Semiconductors and Spintronics Devices 279\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e17. III–V-Based Magnetic Semiconductors and Spintronics Devices 281\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eHiro Munekata\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e17.1 Introduction 281\u003c\/p\u003e \u003cp\u003e17.2 Hole-Mediated Ferromagnetism 282\u003c\/p\u003e \u003cp\u003e17.3 Molecular Beam Epitaxy and Materials Characterization 285\u003c\/p\u003e \u003cp\u003e17.4 Studies in View of Spintronics Applications 293\u003c\/p\u003e \u003cp\u003e17.5 Conclusions and Prospects 296\u003c\/p\u003e \u003cp\u003eAcknowledgments 296\u003c\/p\u003e \u003cp\u003eReferences 296\u003c\/p\u003e \u003cp\u003e\u003cb\u003e18. III-Nitride Dilute Magnetic Semiconductors 299\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYi-Kai Zhou and Hajime Asahi\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e18.1 Introduction 299\u003c\/p\u003e \u003cp\u003e18.2 Transition-Metal-Doped GaN 300\u003c\/p\u003e \u003cp\u003e18.3 Rare-Earth-Doped III-Nitrides 303\u003c\/p\u003e \u003cp\u003e18.4 Device Applications 309\u003c\/p\u003e \u003cp\u003e18.5 Summary 312\u003c\/p\u003e \u003cp\u003eReferences 312\u003c\/p\u003e \u003cp\u003e\u003cb\u003e19. MBE Growth, Magnetic and Magneto-optical Properties of II–VI DMSs 315\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eShinji Kuroda\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e19.1 II–VI DMSs Doped with Mn 315\u003c\/p\u003e \u003cp\u003e19.2 II–VI DMSs Doped with Cr and Fe 319\u003c\/p\u003e \u003cp\u003e19.3 ZnO-Based DMSs 323\u003c\/p\u003e \u003cp\u003eReferences 325\u003c\/p\u003e \u003cp\u003e\u003cb\u003e20. Ferromagnet\/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy 329\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMasaaki Tanaka\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e20.1 Introduction 329\u003c\/p\u003e \u003cp\u003e20.2 MnAs on GaAs(001) and Si(001) Substrates 330\u003c\/p\u003e \u003cp\u003e20.3 GaAs:MnAs Granular Materials: Magnetoresistive Effects and Related Devices 337\u003c\/p\u003e \u003cp\u003e20.4 Summary 345\u003c\/p\u003e \u003cp\u003eAcknowledgments 345\u003c\/p\u003e \u003cp\u003eReferences 346\u003c\/p\u003e \u003cp\u003e\u003cb\u003e21. MBE Growth of Ge-Based Diluted Magnetic Semiconductors 349\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eTianxiao Nie, Jianshi Tang, and Kang L. Wang\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e21.1 Introduction 349\u003c\/p\u003e \u003cp\u003e21.2 MBE Growth of Mn\u003ci\u003ex\u003c\/i\u003eGe1−\u003ci\u003ex \u003c\/i\u003eThin Film and Nanostructures 351\u003c\/p\u003e \u003cp\u003e21.3 Magnetic Properties of Mn\u003ci\u003ex\u003c\/i\u003eGe1−\u003ci\u003ex \u003c\/i\u003eThin Films and Nanostructures 355\u003c\/p\u003e \u003cp\u003e21.4 Electric-Field-Controlled Ferromagnetism and Magnetoresistance 359\u003c\/p\u003e \u003cp\u003e21.5 Conclusion 362\u003c\/p\u003e \u003cp\u003eAcknowledgments 362\u003c\/p\u003e \u003cp\u003eReferences 363\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePart V Challenge of MBE to New Materials and \u003c\/b\u003e\u003cb\u003eNew Researches 365\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003e22. Molecular Beam Epitaxial Growth of Topological Insulators 367\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eXiao Feng, Ke He, Xucun Ma, and Qi-Kun Xue\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e22.1 Introduction 367\u003c\/p\u003e \u003cp\u003e22.2 MBE Growth of Bi2Se3 Family Three-Dimensional Topological Insulators 368\u003c\/p\u003e \u003cp\u003e22.3 Defects in MBE-Grown Bi2Se3 Family TI Films 371\u003c\/p\u003e \u003cp\u003e22.4 Band Structure Engineering in Ternary Bi2Se3 Family TIs 373\u003c\/p\u003e \u003cp\u003e22.5 Magnetically Doped Bi2Se3 Family TIs 373\u003c\/p\u003e \u003cp\u003e22.6 MBE Growth of 2D TI Materials 375\u003c\/p\u003e \u003cp\u003e22.7 Summary 377\u003c\/p\u003e \u003cp\u003eReferences 377\u003c\/p\u003e \u003cp\u003e\u003cb\u003e23. Applications of Bismuth-Containing III–V Semiconductors in Devices 381\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMasahiro Yoshimoto\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e23.1 Introduction 381\u003c\/p\u003e \u003cp\u003e23.2 Growth of GaAsBi 382\u003c\/p\u003e \u003cp\u003e23.3 Properties of GaAsBi 384\u003c\/p\u003e \u003cp\u003e23.4 Applications of GaAsBi 385\u003c\/p\u003e \u003cp\u003e23.5 Applications of Other Bi-Containing Semiconductors 390\u003c\/p\u003e \u003cp\u003e23.6 Summary 391\u003c\/p\u003e \u003cp\u003eReferences 392\u003c\/p\u003e \u003cp\u003e\u003cb\u003e24. MBE Growth of Graphene 395\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eJ. Marcelo J. Lopes\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e24.1 Introduction 395\u003c\/p\u003e \u003cp\u003e24.2 MBE of Graphene on Metals 398\u003c\/p\u003e \u003cp\u003e24.3 MBE of Graphene on Semiconductors 399\u003c\/p\u003e \u003cp\u003e24.4 MBE of Graphene on Oxides and Other Dielectrics 403\u003c\/p\u003e \u003cp\u003e24.5 Conclusions 407\u003c\/p\u003e \u003cp\u003eAcknowledgments 408\u003c\/p\u003e \u003cp\u003eReferences 408\u003c\/p\u003e \u003cp\u003e\u003cb\u003e25. MBE Growth and Device Applications of Ga2O3 411\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eMasataka Higashiwaki\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e25.1 Introduction 411\u003c\/p\u003e \u003cp\u003e25.2 Physical Properties of Ga2O3 411\u003c\/p\u003e \u003cp\u003e25.3 Ga2O3 Electronic Device Applications 414\u003c\/p\u003e \u003cp\u003e25.4 Melt-Grown Bulk Single Crystals 414\u003c\/p\u003e \u003cp\u003e25.5 Ga2O3 MBE Growth 414\u003c\/p\u003e \u003cp\u003e25.6 Transistor Applications 419\u003c\/p\u003e \u003cp\u003e25.7 Summary 421\u003c\/p\u003e \u003cp\u003eReferences 421\u003c\/p\u003e \u003cp\u003e\u003cb\u003e26. Molecular Beam Epitaxy for Oxide Electronics 423\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eAbhinav Prakash and Bharat Jalan\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e26.1 Introduction 423\u003c\/p\u003e \u003cp\u003e26.2 Structure–Property Relationship in Perovskite Oxides 423\u003c\/p\u003e \u003cp\u003e26.3 Oxide Molecular Beam Epitaxy 430\u003c\/p\u003e \u003cp\u003e26.4 Recent Developments in Oxide MBE 435\u003c\/p\u003e \u003cp\u003e26.5 Outlook 443\u003c\/p\u003e \u003cp\u003e26.6 Summary 447\u003c\/p\u003e \u003cp\u003eAcknowledgments 447\u003c\/p\u003e \u003cp\u003eReferences 447\u003c\/p\u003e \u003cp\u003e\u003cb\u003e27. \u003ci\u003eIn-situ \u003c\/i\u003eSTM Study of MBE Growth Process 453\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eShiro Tsukamoto\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e27.1 Introduction 453\u003c\/p\u003e \u003cp\u003e27.2 The Advantages of \u003ci\u003eIn-situ \u003c\/i\u003eSTM Observation for Understanding Growth Mechanisms 454\u003c\/p\u003e \u003cp\u003e27.3 \u003ci\u003eIn-situ \u003c\/i\u003eSTM Observation of InAs Growth on GaAs(001) by STMBE System 454\u003c\/p\u003e \u003cp\u003e27.4 \u003ci\u003eIn-situ \u003c\/i\u003eSTM Observation of Various Growths and Treatments on GaAs Surfaces by STMBE System 456\u003c\/p\u003e \u003cp\u003e27.5 Conclusion 460\u003c\/p\u003e \u003cp\u003eReferences 460\u003c\/p\u003e \u003cp\u003e\u003cb\u003e28. Heterovalent Semiconductor Structures and their Device Applications 463\u003cbr\u003e\u003c\/b\u003e\u003ci\u003eYong-Hang Zhang\u003c\/i\u003e\u003c\/p\u003e \u003cp\u003e28.1 Introduction 463\u003c\/p\u003e \u003cp\u003e28.2 MBE Growth of Heterovalent Structures 465\u003c\/p\u003e \u003cp\u003e28.3 ZnTe and GaSb\/ZnTe Heterovalent Distributed Bragg Reflector Structures Grown on GaSb 466\u003c\/p\u003e \u003cp\u003e28.4 CdTe\/MgCdTe Structure and Heterovalent Devices Grown on InSb Substrates 468\u003c\/p\u003e \u003cp\u003e28.5 Single-Crystal CdTe\/Mg\u003ci\u003ex\u003c\/i\u003eCd1−\u003ci\u003ex\u003c\/i\u003eTe Solar Cells 474\u003c\/p\u003e \u003cp\u003e28.6 CdTe\/InSb Two-Color Photodetectors 477\u003c\/p\u003e \u003cp\u003eAcknowledgments 479\u003c\/p\u003e \u003cp\u003eReferences 480\u003c\/p\u003e \u003cp\u003eIndex i1\u003c\/p\u003e  \u003cp\u003e\u003cb\u003eSeries Editors\u003c\/b\u003e \u003c\/p\u003e\u003cp\u003e\u003cb\u003eArthur Willoughby\u003c\/b\u003e University of Southampton, Southampton, UK \u003c\/p\u003e\u003cp\u003e\u003cb\u003ePeter Capper\u003c\/b\u003e formerly of SELEX Galileo Infrared Ltd, Southampton, UK \u003c\/p\u003e\u003cp\u003e\u003cb\u003eSafa Kasap\u003c\/b\u003e University of Saskatchewan, Saskatoon, Canada \u003c\/p\u003e\u003cp\u003eEdited by \u003cb\u003eHajime Asahi\u003c\/b\u003e \u003ci\u003eEmeritus Professor, Osaka University, Japan\u003c\/i\u003e \u003c\/p\u003e\u003cp\u003e\u003cb\u003eYoshiji Horikoshi\u003c\/b\u003e \u003ci\u003eEmeritus Professor, Waseda University, Tokyo, Japan\u003c\/i\u003e\t  \u003c\/p\u003e\u003cp\u003e\u003cb\u003eCovers both the fundamentals and the state-of-the-art technology used for MBE\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eWritten by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.\u003c\/p\u003e \u003cp\u003e\u003ci\u003eMolecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics\u003c\/i\u003e is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet\/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.\u003c\/p\u003e \u003cul\u003e \u003cli\u003eIncludes chapters on the fundamentals of MBE\u003c\/li\u003e \u003cli\u003eCovers new challenging researches in MBE and new technologies\u003c\/li\u003e \u003cli\u003eEdited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners\u003c\/li\u003e \u003cli\u003ePart of the Materials for Electronic and Optoelectronic Applications series\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003e\u003ci\u003eMolecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics\u003c\/i\u003e will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.\u003c\/p\u003e","brand":"Wiley","offers":[{"title":"Default Title","offer_id":47989647081701,"sku":"NP9781119355014","price":242.95,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/1842\/7735\/files\/9781119355014.jpg?v=1761784946","url":"https:\/\/k12savings.com\/products\/molecular-beam-epitaxy-isbn-9781119355014","provider":"K12savings","version":"1.0","type":"link"}