{"product_id":"semiconductor-material-and-device-characterization-isbn-9780471739067","title":"Semiconductor Material and Device Characterization","description":"\u003cb\u003eThis \u003ci\u003eThird Edition\u003c\/i\u003e updates a landmark text with the latest findings\u003c\/b\u003e  \u003cp\u003e\u003ci\u003eThe Third Edition\u003c\/i\u003e of the internationally lauded \u003ci\u003eSemiconductor Material and Device Characterization\u003c\/i\u003e brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the \u003ci\u003eThird Edition\u003c\/i\u003e set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.\u003c\/p\u003e \u003cp\u003e\u003ci\u003eSemiconductor Material and Device Characterization\u003c\/i\u003e remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated \u003ci\u003eThird Edition\u003c\/i\u003e, including:\u003c\/p\u003e \u003cul\u003e \u003cli\u003eUpdated and revised figures and examples reflecting the most current data and information\u003c\/li\u003e \u003cli\u003e260 new references offering access to the latest research and discussions in specialized topics\u003c\/li\u003e \u003cli\u003eNew problems and review questions at the end of each chapter to test readers' understanding of the material\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003eIn addition, readers will find fully updated and revised sections in each chapter.\u003c\/p\u003e \u003cp\u003ePlus, two new chapters have been added:\u003c\/p\u003e \u003cul\u003e \u003cli\u003eCharge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.\u003c\/li\u003e \u003cli\u003eReliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003eWritten by an internationally recognized authority in the field, \u003ci\u003eSemiconductor Material and Device Characterization\u003c\/i\u003e remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.\u003c\/p\u003e \u003cp\u003eAn Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.\u003c\/p\u003e \u003cp\u003ePreface to Third Edition xiii\u003c\/p\u003e \u003cp\u003e\u003cb\u003e1 Resistivity 1\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e1.1 Introduction, 1\u003c\/p\u003e \u003cp\u003e1.2 Two-Point Versus Four-Point Probe, 2\u003c\/p\u003e \u003cp\u003e1.2.1 Correction Factors, 8\u003c\/p\u003e \u003cp\u003e1.2.2 Resistivity of Arbitrarily Shaped Samples, 14\u003c\/p\u003e \u003cp\u003e1.2.3 Measurement Circuits, 18\u003c\/p\u003e \u003cp\u003e1.2.4 Measurement Errors and Precautions, 18\u003c\/p\u003e \u003cp\u003e1.3 Wafer Mapping, 21\u003c\/p\u003e \u003cp\u003e1.3.1 Double Implant, 21\u003c\/p\u003e \u003cp\u003e1.3.2 Modulated Photoreflectance, 23\u003c\/p\u003e \u003cp\u003e1.3.3 Carrier Illumination (CI), 24\u003c\/p\u003e \u003cp\u003e1.3.4 Optical Densitometry, 25\u003c\/p\u003e \u003cp\u003e1.4 Resistivity Profiling, 25\u003c\/p\u003e \u003cp\u003e1.4.1 Differential Hall Effect (DHE), 26\u003c\/p\u003e \u003cp\u003e1.4.2 Spreading Resistance Profiling (SRP), 29\u003c\/p\u003e \u003cp\u003e1.5 Contactless Methods, 34\u003c\/p\u003e \u003cp\u003e1.5.1 Eddy Current, 34\u003c\/p\u003e \u003cp\u003e1.6 Conductivity Type, 38\u003c\/p\u003e \u003cp\u003e1.7 Strengths and Weaknesses, 40\u003c\/p\u003e \u003cp\u003eAppendix 1.1 Resistivity as a Function of Doping Density, 41\u003c\/p\u003e \u003cp\u003eAppendix 1.2 Intrinsic Carrier Density, 43\u003c\/p\u003e \u003cp\u003eReferences, 44\u003c\/p\u003e \u003cp\u003eProblems, 50\u003c\/p\u003e \u003cp\u003eReview Questions, 59\u003c\/p\u003e \u003cp\u003e\u003cb\u003e2 Carrier and Doping Density 61\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Introduction, 61\u003c\/p\u003e \u003cp\u003e2.2 Capacitance-Voltage (C-V), 61\u003c\/p\u003e \u003cp\u003e2.2.1 Differential Capacitance, 61\u003c\/p\u003e \u003cp\u003e2.2.2 Band Offsets, 68\u003c\/p\u003e \u003cp\u003e2.2.3 Maximum-Minimum MOS-C Capacitance, 71\u003c\/p\u003e \u003cp\u003e2.2.4 Integral Capacitance, 75\u003c\/p\u003e \u003cp\u003e2.2.5 Mercury Probe Contacts, 76\u003c\/p\u003e \u003cp\u003e2.2.6 Electrochemical C–V Profiler (ECV), 77\u003c\/p\u003e \u003cp\u003e2.3 Current-Voltage (I-V), 79\u003c\/p\u003e \u003cp\u003e2.3.1 MOSFET Substrate Voltage—Gate Voltage, 79\u003c\/p\u003e \u003cp\u003e2.3.2 MOSFET Threshold Voltage, 81\u003c\/p\u003e \u003cp\u003e2.3.3 Spreading Resistance, 82\u003c\/p\u003e \u003cp\u003e2.4 Measurement Errors and Precautions, 82\u003c\/p\u003e \u003cp\u003e2.4.1 Debye Length and Voltage Breakdown, 82\u003c\/p\u003e \u003cp\u003e2.4.2 Series Resistance, 83\u003c\/p\u003e \u003cp\u003e2.4.3 Minority Carriers and Interface Traps, 89\u003c\/p\u003e \u003cp\u003e2.4.4 Diode Edge and Stray Capacitance, 90\u003c\/p\u003e \u003cp\u003e2.4.5 Excess Leakage Current, 91\u003c\/p\u003e \u003cp\u003e2.4.6 Deep Level Dopants\/Traps, 91\u003c\/p\u003e \u003cp\u003e2.4.7 Semi-Insulating Substrates, 93\u003c\/p\u003e \u003cp\u003e2.4.8 Instrumental Limitations, 94\u003c\/p\u003e \u003cp\u003e2.5 Hall Effect, 94\u003c\/p\u003e \u003cp\u003e2.6 Optical Techniques, 97\u003c\/p\u003e \u003cp\u003e2.6.1 Plasma Resonance, 97\u003c\/p\u003e \u003cp\u003e2.6.2 Free Carrier Absorption, 98\u003c\/p\u003e \u003cp\u003e2.6.3 Infrared Spectroscopy, 99\u003c\/p\u003e \u003cp\u003e2.6.4 Photoluminescence (PL), 101\u003c\/p\u003e \u003cp\u003e2.7 Secondary Ion Mass Spectrometry (SIMS), 102\u003c\/p\u003e \u003cp\u003e2.8 Rutherford Backscattering (RBS), 103\u003c\/p\u003e \u003cp\u003e2.9 Lateral Profiling, 104\u003c\/p\u003e \u003cp\u003e2.10 Strengths and Weaknesses, 105\u003c\/p\u003e \u003cp\u003eAppendix 2.1 Parallel or Series Connection?, 107\u003c\/p\u003e \u003cp\u003eAppendix 2.2 Circuit Conversion, 108\u003c\/p\u003e \u003cp\u003eReferences, 109\u003c\/p\u003e \u003cp\u003eProblems, 117\u003c\/p\u003e \u003cp\u003eReview Questions, 124\u003c\/p\u003e \u003cp\u003e\u003cb\u003e3 Contact Resistance and Schottky Barriers 127\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1 Introduction, 127\u003c\/p\u003e \u003cp\u003e3.2 Metal-Semiconductor Contacts, 128\u003c\/p\u003e \u003cp\u003e3.3 Contact Resistance, 131\u003c\/p\u003e \u003cp\u003e3.4 Measurement Techniques, 135\u003c\/p\u003e \u003cp\u003e3.4.1 Two-Contact Two-Terminal Method, 135\u003c\/p\u003e \u003cp\u003e3.4.2 Multiple-Contact Two-Terminal Methods, 138\u003c\/p\u003e \u003cp\u003e3.4.3 Four-Terminal Contact Resistance Method, 149\u003c\/p\u003e \u003cp\u003e3.4.4 Six-Terminal Contact Resistance Method, 156\u003c\/p\u003e \u003cp\u003e3.4.5 Non-Planar Contacts, 156\u003c\/p\u003e \u003cp\u003e3.5 Schottky Barrier Height, 157\u003c\/p\u003e \u003cp\u003e3.5.1 Current-Voltage, 158\u003c\/p\u003e \u003cp\u003e3.5.2 Current—Temperature, 160\u003c\/p\u003e \u003cp\u003e3.5.3 Capacitance-Voltage, 161\u003c\/p\u003e \u003cp\u003e3.5.4 Photocurrent, 162\u003c\/p\u003e \u003cp\u003e3.5.5 Ballistic Electron Emission Microscopy (BEEM), 163\u003c\/p\u003e \u003cp\u003e3.6 Comparison of Methods, 163\u003c\/p\u003e \u003cp\u003e3.7 Strengths and Weaknesses, 164\u003c\/p\u003e \u003cp\u003eAppendix 3.1 Effect of Parasitic Resistance, 165\u003c\/p\u003e \u003cp\u003eAppendix 3.2 Alloys for Contacts to Semiconductors, 167\u003c\/p\u003e \u003cp\u003eReferences, 168\u003c\/p\u003e \u003cp\u003eProblems, 174\u003c\/p\u003e \u003cp\u003eReview Questions, 184\u003c\/p\u003e \u003cp\u003e\u003cb\u003e4 Series Resistance, Channel Length and Width, and Threshold Voltage 185\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 Introduction, 185\u003c\/p\u003e \u003cp\u003e4.2 PN Junction Diodes, 185\u003c\/p\u003e \u003cp\u003e4.2.1 Current-Voltage, 185\u003c\/p\u003e \u003cp\u003e4.2.2 Open-Circuit Voltage Decay (OCVD), 188\u003c\/p\u003e \u003cp\u003e4.2.3 Capacitance-Voltage (C–V ), 190\u003c\/p\u003e \u003cp\u003e4.3 Schottky Barrier Diodes, 190\u003c\/p\u003e \u003cp\u003e4.3.1 Series Resistance, 190\u003c\/p\u003e \u003cp\u003e4.4 Solar Cells, 192\u003c\/p\u003e \u003cp\u003e4.4.1 Series Resistance—Multiple Light Intensities, 195\u003c\/p\u003e \u003cp\u003e4.4.2 Series Resistance—Constant Light Intensity, 196\u003c\/p\u003e \u003cp\u003e4.4.3 Shunt Resistance, 197\u003c\/p\u003e \u003cp\u003e4.5 Bipolar Junction Transistors, 198\u003c\/p\u003e \u003cp\u003e4.5.1 Emitter Resistance, 200\u003c\/p\u003e \u003cp\u003e4.5.2 Collector Resistance, 202\u003c\/p\u003e \u003cp\u003e4.5.3 Base Resistance, 202\u003c\/p\u003e \u003cp\u003e4.6 MOSFETS, 206\u003c\/p\u003e \u003cp\u003e4.6.1 Series Resistance and Channel Length–Current-Voltage, 206\u003c\/p\u003e \u003cp\u003e4.6.2 Channel Length—Capacitance-Voltage, 216\u003c\/p\u003e \u003cp\u003e4.6.3 Channel Width, 218\u003c\/p\u003e \u003cp\u003e4.7 MESFETS and MODFETS, 219\u003c\/p\u003e \u003cp\u003e4.8 Threshold Voltage, 222\u003c\/p\u003e \u003cp\u003e4.8.1 Linear Extrapolation, 223\u003c\/p\u003e \u003cp\u003e4.8.2 Constant Drain Current, 225\u003c\/p\u003e \u003cp\u003e4.8.3 Sub-threshold Drain Current, 226\u003c\/p\u003e \u003cp\u003e4.8.4 Transconductance, 227\u003c\/p\u003e \u003cp\u003e4.8.5 Transconductance Derivative, 228\u003c\/p\u003e \u003cp\u003e4.8.6 Drain Current Ratio, 228\u003c\/p\u003e \u003cp\u003e4.9 Pseudo MOSFET, 230\u003c\/p\u003e \u003cp\u003e4.10 Strengths and Weaknesses, 231\u003c\/p\u003e \u003cp\u003eAppendix 4.1 Schottky Diode Current-Voltage Equation, 231\u003c\/p\u003e \u003cp\u003eReferences, 232\u003c\/p\u003e \u003cp\u003eProblems, 238\u003c\/p\u003e \u003cp\u003eReview Questions, 250\u003c\/p\u003e \u003cp\u003e\u003cb\u003e5 Defects 251\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 Introduction, 251\u003c\/p\u003e \u003cp\u003e5.2 Generation-Recombination Statistics, 253\u003c\/p\u003e \u003cp\u003e5.2.1 A Pictorial View, 253\u003c\/p\u003e \u003cp\u003e5.2.2 A Mathematical Description, 255\u003c\/p\u003e \u003cp\u003e5.3 Capacitance Measurements, 258\u003c\/p\u003e \u003cp\u003e5.3.1 Steady-State Measurements, 259\u003c\/p\u003e \u003cp\u003e5.3.2 Transient Measurements, 259\u003c\/p\u003e \u003cp\u003e5.4 Current Measurements, 267\u003c\/p\u003e \u003cp\u003e5.5 Charge Measurements, 269\u003c\/p\u003e \u003cp\u003e5.6 Deep-Level Transient Spectroscopy (DLTS), 270\u003c\/p\u003e \u003cp\u003e5.6.1 Conventional DLTS, 270\u003c\/p\u003e \u003cp\u003e5.6.2 Interface Trapped Charge DLTS, 280\u003c\/p\u003e \u003cp\u003e5.6.3 Optical and Scanning DLTS, 283\u003c\/p\u003e \u003cp\u003e5.6.4 Precautions, 285\u003c\/p\u003e \u003cp\u003e5.7 Thermally Stimulated Capacitance and Current, 288\u003c\/p\u003e \u003cp\u003e5.8 Positron Annihilation Spectroscopy (PAS), 289\u003c\/p\u003e \u003cp\u003e5.9 Strengths and Weaknesses, 292\u003c\/p\u003e \u003cp\u003eAppendix 5.1 Activation Energy and Capture Cross-Section, 293\u003c\/p\u003e \u003cp\u003eAppendix 5.2 Time Constant Extraction, 294\u003c\/p\u003e \u003cp\u003eAppendix 5.3 Si and GaAs Data, 296\u003c\/p\u003e \u003cp\u003eReferences, 301\u003c\/p\u003e \u003cp\u003eProblems, 308\u003c\/p\u003e \u003cp\u003eReview Questions, 316\u003c\/p\u003e \u003cp\u003e\u003cb\u003e6 Oxide and Interface Trapped Charges, Oxide Thickness 319\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 Introduction, 319\u003c\/p\u003e \u003cp\u003e6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge, 321\u003c\/p\u003e \u003cp\u003e6.2.1 Capacitance-Voltage Curves, 321\u003c\/p\u003e \u003cp\u003e6.2.2 Flatband Voltage, 327\u003c\/p\u003e \u003cp\u003e6.2.3 Capacitance Measurements, 331\u003c\/p\u003e \u003cp\u003e6.2.4 Fixed Charge, 334\u003c\/p\u003e \u003cp\u003e6.2.5 Gate-Semiconductor Work Function Difference, 335\u003c\/p\u003e \u003cp\u003e6.2.6 Oxide Trapped Charge, 338\u003c\/p\u003e \u003cp\u003e6.2.7 Mobile Charge, 338\u003c\/p\u003e \u003cp\u003e6.3 Interface Trapped Charge, 342\u003c\/p\u003e \u003cp\u003e6.3.1 Low Frequency (Quasi-static) Methods, 342\u003c\/p\u003e \u003cp\u003e6.3.2 Conductance, 347\u003c\/p\u003e \u003cp\u003e6.3.3 High Frequency Methods, 350\u003c\/p\u003e \u003cp\u003e6.3.4 Charge Pumping, 352\u003c\/p\u003e \u003cp\u003e6.3.5 MOSFET Sub-threshold Current, 359\u003c\/p\u003e \u003cp\u003e6.3.6 DC-IV, 361\u003c\/p\u003e \u003cp\u003e6.3.7 Other Methods, 363\u003c\/p\u003e \u003cp\u003eCONTENTS ix\u003c\/p\u003e \u003cp\u003e6.4 Oxide Thickness, 364\u003c\/p\u003e \u003cp\u003e6.4.1 Capacitance-Voltage, 364\u003c\/p\u003e \u003cp\u003e6.4.2 Current-Voltage, 369\u003c\/p\u003e \u003cp\u003e6.4.3 Other Methods, 369\u003c\/p\u003e \u003cp\u003e6.5 Strengths and Weaknesses, 369\u003c\/p\u003e \u003cp\u003eAppendix 6.1 Capacitance Measurement Techniques, 371\u003c\/p\u003e \u003cp\u003eAppendix 6.2 Effect of Chuck Capacitance and Leakage Current, 372\u003c\/p\u003e \u003cp\u003eReferences, 374\u003c\/p\u003e \u003cp\u003eProblems, 381\u003c\/p\u003e \u003cp\u003eReview Questions, 387\u003c\/p\u003e \u003cp\u003e\u003cb\u003e7 Carrier Lifetimes 389\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1 Introduction, 389\u003c\/p\u003e \u003cp\u003e7.2 Recombination Lifetime\/Surface Recombination Velocity, 390\u003c\/p\u003e \u003cp\u003e7.3 Generation Lifetime\/Surface Generation Velocity, 394\u003c\/p\u003e \u003cp\u003e7.4 Recombination Lifetime—Optical Measurements, 395\u003c\/p\u003e \u003cp\u003e7.4.1 Photoconductance Decay (PCD), 399\u003c\/p\u003e \u003cp\u003e7.4.2 Quasi-Steady-State Photoconductance (QSSPC), 402\u003c\/p\u003e \u003cp\u003e7.4.3 Short-Circuit Current\/Open-Circuit Voltage Decay (SCCD\/OCVD), 402\u003c\/p\u003e \u003cp\u003e7.4.4 Photoluminescence Decay (PLD), 404\u003c\/p\u003e \u003cp\u003e7.4.5 Surface Photovoltage (SPV), 404\u003c\/p\u003e \u003cp\u003e7.4.6 Steady-State Short-Circuit Current (SSSCC), 411\u003c\/p\u003e \u003cp\u003e7.4.7 Free Carrier Absorption, 413\u003c\/p\u003e \u003cp\u003e7.4.8 Electron Beam Induced Current (EBIC), 416\u003c\/p\u003e \u003cp\u003e7.5 Recombination Lifetime—Electrical Measurements, 417\u003c\/p\u003e \u003cp\u003e7.5.1 Diode Current-Voltage, 417\u003c\/p\u003e \u003cp\u003e7.5.2 Reverse Recovery (RR), 420\u003c\/p\u003e \u003cp\u003e7.5.3 Open-Circuit Voltage Decay (OCVD), 422\u003c\/p\u003e \u003cp\u003e7.5.4 Pulsed MOS Capacitor, 424\u003c\/p\u003e \u003cp\u003e7.5.5 Other Techniques, 428\u003c\/p\u003e \u003cp\u003e7.6 Generation Lifetime—Electrical Measurements, 429\u003c\/p\u003e \u003cp\u003e7.6.1 Gate-Controlled Diode, 429\u003c\/p\u003e \u003cp\u003e7.6.2 Pulsed MOS Capacitor, 432\u003c\/p\u003e \u003cp\u003e7.7 Strengths and Weaknesses, 440\u003c\/p\u003e \u003cp\u003eAppendix 7.1 Optical Excitation, 441\u003c\/p\u003e \u003cp\u003eAppendix 7.2 Electrical Excitation, 448\u003c\/p\u003e \u003cp\u003eReferences, 448\u003c\/p\u003e \u003cp\u003eProblems, 458\u003c\/p\u003e \u003cp\u003eReview Questions, 464\u003c\/p\u003e \u003cp\u003e\u003cb\u003e8 Mobility 465\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e8.1 Introduction, 465\u003c\/p\u003e \u003cp\u003e8.2 Conductivity Mobility, 465\u003c\/p\u003e \u003cp\u003e8.3 Hall Effect and Mobility, 466\u003c\/p\u003e \u003cp\u003e8.3.1 Basic Equations for Uniform Layers or Wafers, 466\u003c\/p\u003e \u003cp\u003e8.3.2 Non-uniform Layers, 471\u003c\/p\u003e \u003cp\u003e8.3.3 Multi Layers, 474\u003c\/p\u003e \u003cp\u003e8.3.4 Sample Shapes and Measurement Circuits, 475\u003c\/p\u003e \u003cp\u003e8.4 Magnetoresistance Mobility, 479\u003c\/p\u003e \u003cp\u003e8.5 Time-of-Flight Drift Mobility, 482\u003c\/p\u003e \u003cp\u003e8.6 MOSFET Mobility, 489\u003c\/p\u003e \u003cp\u003e8.6.1 Effective Mobility, 489\u003c\/p\u003e \u003cp\u003e8.6.2 Field-Effect Mobility, 500\u003c\/p\u003e \u003cp\u003e8.6.3 Saturation Mobility, 502\u003c\/p\u003e \u003cp\u003e8.7 Contactless Mobility, 502\u003c\/p\u003e \u003cp\u003e8.8 Strengths and Weaknesses, 502\u003c\/p\u003e \u003cp\u003eAppendix 8.1 Semiconductor Bulk Mobilities, 503\u003c\/p\u003e \u003cp\u003eAppendix 8.2 Semiconductor Surface Mobilities, 506\u003c\/p\u003e \u003cp\u003eAppendix 8.3 Effect of Channel Frequency Response, 506\u003c\/p\u003e \u003cp\u003eAppendix 8.4 Effect of Interface Trapped Charge, 507\u003c\/p\u003e \u003cp\u003eReferences, 508\u003c\/p\u003e \u003cp\u003eProblems, 514\u003c\/p\u003e \u003cp\u003eReview Questions, 521\u003c\/p\u003e \u003cp\u003e\u003cb\u003e9 Charge-based and Probe Characterization 523\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e9.1 Introduction, 523\u003c\/p\u003e \u003cp\u003e9.2 Background, 524\u003c\/p\u003e \u003cp\u003e9.3 Surface Charging, 525\u003c\/p\u003e \u003cp\u003e9.4 The Kelvin Probe, 526\u003c\/p\u003e \u003cp\u003e9.5 Applications, 533\u003c\/p\u003e \u003cp\u003e9.5.1 Surface Photovoltage (SPV), 533\u003c\/p\u003e \u003cp\u003e9.5.2 Carrier Lifetimes, 534\u003c\/p\u003e \u003cp\u003e9.5.3 Surface Modification, 537\u003c\/p\u003e \u003cp\u003e9.5.4 Near-Surface Doping Density, 538\u003c\/p\u003e \u003cp\u003e9.5.5 Oxide Charge, 538\u003c\/p\u003e \u003cp\u003e9.5.6 Oxide Thickness and Interface Trap Density, 540\u003c\/p\u003e \u003cp\u003e9.5.7 Oxide Leakage Current, 541\u003c\/p\u003e \u003cp\u003e9.6 Scanning Probe Microscopy (SPM), 542\u003c\/p\u003e \u003cp\u003e9.6.1 Scanning Tunneling Microscopy (STM), 543\u003c\/p\u003e \u003cp\u003e9.6.2 Atomic Force Microscopy (AFM), 544\u003c\/p\u003e \u003cp\u003e9.6.3 Scanning Capacitance Microscopy (SCM), 547\u003c\/p\u003e \u003cp\u003e9.6.4 Scanning Kelvin Probe Microscopy (SKPM), 550\u003c\/p\u003e \u003cp\u003e9.6.5 Scanning Spreading Resistance Microscopy (SSRM), 553\u003c\/p\u003e \u003cp\u003e9.6.6 Ballistic Electron Emission Microscopy (BEEM), 554\u003c\/p\u003e \u003cp\u003e9.7 Strengths and Weaknesses, 556\u003c\/p\u003e \u003cp\u003eReferences, 556\u003c\/p\u003e \u003cp\u003eProblems, 560\u003c\/p\u003e \u003cp\u003eReview Questions, 561\u003c\/p\u003e \u003cp\u003e\u003cb\u003e10 Optical Characterization 563\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e10.1 Introduction, 563\u003c\/p\u003e \u003cp\u003e10.2 Optical Microscopy, 564\u003c\/p\u003e \u003cp\u003e10.2.1 Resolution, Magnification, Contrast, 565\u003c\/p\u003e \u003cp\u003e10.2.2 Dark-Field, Phase, and Interference Contrast Microscopy, 568\u003c\/p\u003e \u003cp\u003e10.2.3 Confocal Optical Microscopy, 570\u003c\/p\u003e \u003cp\u003e10.2.4 Interferometric Microscopy, 572\u003c\/p\u003e \u003cp\u003e10.2.5 Defect Etches, 575\u003c\/p\u003e \u003cp\u003e10.2.6 Near-Field Optical Microscopy (NFOM), 575\u003c\/p\u003e \u003cp\u003e10.3 Ellipsometry, 579\u003c\/p\u003e \u003cp\u003e10.3.1 Theory, 579\u003c\/p\u003e \u003cp\u003e10.3.2 Null Ellipsometry, 581\u003c\/p\u003e \u003cp\u003e10.3.3 Rotating Analyzer Ellipsometry, 582\u003c\/p\u003e \u003cp\u003e10.3.4 Spectroscopic Ellipsometry (SE), 583\u003c\/p\u003e \u003cp\u003e10.3.5 Applications, 584\u003c\/p\u003e \u003cp\u003e10.4 Transmission, 585\u003c\/p\u003e \u003cp\u003e10.4.1 Theory, 585\u003c\/p\u003e \u003cp\u003e10.4.2 Instrumentation, 587\u003c\/p\u003e \u003cp\u003e10.4.3 Applications, 590\u003c\/p\u003e \u003cp\u003e10.5 Reflection, 592\u003c\/p\u003e \u003cp\u003e10.5.1 Theory, 592\u003c\/p\u003e \u003cp\u003e10.5.2 Applications, 594\u003c\/p\u003e \u003cp\u003e10.5.3 Internal Reflection Infrared Spectroscopy, 598\u003c\/p\u003e \u003cp\u003e10.6 Light Scattering, 599\u003c\/p\u003e \u003cp\u003e10.7 Modulation Spectroscopy, 600\u003c\/p\u003e \u003cp\u003e10.8 Line Width, 601\u003c\/p\u003e \u003cp\u003e10.8.1 Optical-Physical Methods, 601\u003c\/p\u003e \u003cp\u003e10.8.2 Electrical Methods, 603\u003c\/p\u003e \u003cp\u003e10.9 Photoluminescence (PL), 604\u003c\/p\u003e \u003cp\u003e10.10 Raman Spectroscopy, 608\u003c\/p\u003e \u003cp\u003e10.11 Strengths and Weaknesses, 610\u003c\/p\u003e \u003cp\u003eAppendix 10.1 Transmission Equations, 611\u003c\/p\u003e \u003cp\u003eAppendix 10.2 Absorption Coefficients and Refractive Indices for Selected\u003c\/p\u003e \u003cp\u003eSemiconductors, 613\u003c\/p\u003e \u003cp\u003eReferences, 615\u003c\/p\u003e \u003cp\u003eProblems, 621\u003c\/p\u003e \u003cp\u003eReview Questions, 626\u003c\/p\u003e \u003cp\u003e\u003cb\u003e11 Chemical and Physical Characterization 627\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e11.1 Introduction, 627\u003c\/p\u003e \u003cp\u003e11.2 Electron Beam Techniques, 628\u003c\/p\u003e \u003cp\u003e11.2.1 Scanning Electron Microscopy (SEM), 629\u003c\/p\u003e \u003cp\u003e11.2.2 Auger Electron Spectroscopy (AES), 634\u003c\/p\u003e \u003cp\u003e11.2.3 Electron Microprobe (EMP), 639\u003c\/p\u003e \u003cp\u003e11.2.4 Transmission Electron Microscopy (TEM), 645\u003c\/p\u003e \u003cp\u003e11.2.5 Electron Beam Induced Current (EBIC), 649\u003c\/p\u003e \u003cp\u003e11.2.6 Cathodoluminescence (CL), 651\u003c\/p\u003e \u003cp\u003e11.2.7 Low-Energy, High-Energy Electron Diffraction (LEED), 652\u003c\/p\u003e \u003cp\u003e11.3 Ion Beam Techniques, 653\u003c\/p\u003e \u003cp\u003e11.3.1 Secondary Ion Mass Spectrometry (SIMS), 654\u003c\/p\u003e \u003cp\u003e11.3.2 Rutherford Backscattering Spectrometry (RBS), 659\u003c\/p\u003e \u003cp\u003e11.4 X-Ray and Gamma-Ray Techniques, 665\u003c\/p\u003e \u003cp\u003e11.4.1 X-Ray Fluorescence (XRF), 666\u003c\/p\u003e \u003cp\u003e11.4.2 X-Ray Photoelectron Spectroscopy (XPS), 668\u003c\/p\u003e \u003cp\u003e11.4.3 X-Ray Topography (XRT), 671\u003c\/p\u003e \u003cp\u003e11.4.4 Neutron Activation Analysis (NAA), 674\u003c\/p\u003e \u003cp\u003e11.5 Strengths and Weaknesses, 676\u003c\/p\u003e \u003cp\u003eAppendix 11.1 Selected Features of Some Analytical Techniques, 678\u003c\/p\u003e \u003cp\u003eReferences, 678\u003c\/p\u003e \u003cp\u003eProblems, 686\u003c\/p\u003e \u003cp\u003eReview Questions, 687\u003c\/p\u003e \u003cp\u003e\u003cb\u003e12 Reliability and Failure Analysis 689\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e12.1 Introduction, 689\u003c\/p\u003e \u003cp\u003e12.2 Failure Times and Acceleration Factors, 690\u003c\/p\u003e \u003cp\u003e12.2.1 Failure Times, 690\u003c\/p\u003e \u003cp\u003e12.2.2 Acceleration Factors, 690\u003c\/p\u003e \u003cp\u003e12.3 Distribution Functions, 692\u003c\/p\u003e \u003cp\u003e12.4 Reliability Concerns, 695\u003c\/p\u003e \u003cp\u003e12.4.1 Electromigration (EM), 695\u003c\/p\u003e \u003cp\u003e12.4.2 Hot Carriers, 701\u003c\/p\u003e \u003cp\u003e12.4.3 Gate Oxide Integrity (GOI), 704\u003c\/p\u003e \u003cp\u003e12.4.4 Negative Bias Temperature Instability (NBTI), 711\u003c\/p\u003e \u003cp\u003e12.4.5 Stress Induced Leakage Current (SILC), 712\u003c\/p\u003e \u003cp\u003e12.4.6 Electrostatic Discharge (ESD), 712\u003c\/p\u003e \u003cp\u003e12.5 Failure Analysis Characterization Techniques, 713\u003c\/p\u003e \u003cp\u003e12.5.1 Quiescent Drain Current (IDDQ), 713\u003c\/p\u003e \u003cp\u003e12.5.2 Mechanical Probes, 715\u003c\/p\u003e \u003cp\u003e12.5.3 Emission Microscopy (EMMI), 715\u003c\/p\u003e \u003cp\u003e12.5.4 Fluorescent Microthermography (FMT), 718\u003c\/p\u003e \u003cp\u003e12.5.5 Infrared Thermography (IRT), 718\u003c\/p\u003e \u003cp\u003e12.5.6 Voltage Contrast, 718\u003c\/p\u003e \u003cp\u003e12.5.7 Laser Voltage Probe (LVP), 719\u003c\/p\u003e \u003cp\u003e12.5.8 Liquid Crystals (LC), 720\u003c\/p\u003e \u003cp\u003e12.5.9 Optical Beam Induced Resistance Change (OBIRCH), 721\u003c\/p\u003e \u003cp\u003e12.5.10 Focused Ion Beam (FIB), 723\u003c\/p\u003e \u003cp\u003e12.5.11 Noise, 723\u003c\/p\u003e \u003cp\u003e12.6 Strengths and Weaknesses, 726\u003c\/p\u003e \u003cp\u003eAppendix 12.1 Gate Currents, 728\u003c\/p\u003e \u003cp\u003eReferences, 730\u003c\/p\u003e \u003cp\u003eProblems, 737\u003c\/p\u003e \u003cp\u003eReview Questions, 740\u003c\/p\u003e \u003cp\u003eAppendix 1 List of Symbols 741\u003c\/p\u003e \u003cp\u003eAppendix 2 Abbreviations and Acronyms 749\u003c\/p\u003e \u003cp\u003eIndex 755\u003c\/p\u003e \u003cp\u003e“The book is well-illustrated and provides an ample bibliography.”  (\u003ci\u003eOptics \u0026amp; Photonics News\u003c\/i\u003e, 4 November 2015)\u003c\/p\u003e \"I strongly recommend this book for those who want to learn device characterization.\" (\u003ci\u003eIEEE Circuits \u0026amp; Devices Magazine\u003c\/i\u003e, November\/December 2006) \u003cb\u003eDIETER K. SCHRODER\u003c\/b\u003e, PhD, is Professor, Department of Electrical Engineering, Arizona State University. He is a recipient of the ASU College of Engineering Teaching Excellence Award and several other teaching awards. In addition to Semiconductor Material and Device Characterization, Dr. Schroder is the author of Advanced MOS Devices.  This Third Edition updates a landmark text with the latest findings  \u003cp\u003eThe Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.\u003c\/p\u003e \u003cp\u003eSemiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:\u003c\/p\u003e \u003cul\u003e \u003cli\u003eUpdated and revised figures and examples reflecting the most current data and information\u003c\/li\u003e \u003cli\u003e260 new references offering access to the latest research and discussions in specialized topics\u003c\/li\u003e \u003cli\u003eNew problems and review questions at the end of each chapter to test readers' understanding of the material\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003eIn addition, readers will find fully updated and revised sections in each chapter.\u003c\/p\u003e \u003cp\u003ePlus, two new chapters have been added:\u003c\/p\u003e \u003cul\u003e \u003cli\u003eCharge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy.\u003c\/li\u003e \u003cli\u003eReliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge.\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003eWritten by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.\u003c\/p\u003e","brand":"Wiley-IEEE Press","offers":[{"title":"Default Title","offer_id":47990006153445,"sku":"NP9780471739067","price":174.0,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/1842\/7735\/files\/9780471739067.jpg?v=1761786190","url":"https:\/\/k12savings.com\/es\/products\/semiconductor-material-and-device-characterization-isbn-9780471739067","provider":"K12savings","version":"1.0","type":"link"}