{"product_id":"semiconductor-devices-isbn-9780470537947","title":"Semiconductor Devices","description":"\u003cp\u003e\u003cb\u003e\u003ci\u003eSemiconductor Devices: Physics and Technology,\u003c\/i\u003e 3rd Edition\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003eThe awaited revision of \u003ci\u003eSemiconductor Devices: Physics and Technology\u003c\/i\u003e offers more than 50% new or revised material that reflects a multitude of important discoveries and advances in device physics and integrated circuit processing.\u003c\/p\u003e \u003cp\u003eOffering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the third edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.\u003c\/p\u003e \u003cp\u003eDivided into three parts, this text covers the basic properties of semiconductor materials, emphasizing silicon and gallium arsenide; the physics and characteristics of semiconductor devices bipolar, unipolar special microwave and photonic devices; and the latest processing technologies, from crystal growth to lithographic pattern transfer.\u003c\/p\u003e \u003cp\u003ePreface vii\u003c\/p\u003e \u003cp\u003eAcknowledgments ix\u003c\/p\u003e \u003cp\u003eChapter 0 Introduction 1\u003c\/p\u003e \u003cp\u003e0.1 Semiconductor Devices 1\u003c\/p\u003e \u003cp\u003e0.2 Semiconductor Technology 6\u003c\/p\u003e \u003cp\u003eSummary 12\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART I SEMICONDUCTOR PHYSICS\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium 15\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e1.1 Semiconductor Materials 15\u003c\/p\u003e \u003cp\u003e1.2 Basic Crystal Structures 17\u003c\/p\u003e \u003cp\u003e1.3 Valence Bonds 22\u003c\/p\u003e \u003cp\u003e1.4 Energy Bands 23\u003c\/p\u003e \u003cp\u003e1.5 Intrinsic Carrier Concentration 29\u003c\/p\u003e \u003cp\u003e1.6 Donors and Acceptors 34\u003c\/p\u003e \u003cp\u003eSummary 40\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 2 Carrier Transport Phenomena 43\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e2.1 Carrier Drift 43\u003c\/p\u003e \u003cp\u003e2.2 Carrier Diffusion 53\u003c\/p\u003e \u003cp\u003e2.3 Generation and Recombination Processes 56\u003c\/p\u003e \u003cp\u003e2.4 Continuity Equation 62\u003c\/p\u003e \u003cp\u003e2.5 Thermionic Emission Process 68\u003c\/p\u003e \u003cp\u003e2.6 Tunneling Process 69\u003c\/p\u003e \u003cp\u003e2.7 Space-Charge Effect 71\u003c\/p\u003e \u003cp\u003e2.8 High-Field Effects 73\u003c\/p\u003e \u003cp\u003eSummary 77\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART II SEMICONDUCTOR DEVICES\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 3 \u003ci\u003ep-n\u003c\/i\u003e Junction 82\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e3.1 Thermal Equilibrium Condition 83\u003c\/p\u003e \u003cp\u003e3.2 Depletion Region 87\u003c\/p\u003e \u003cp\u003e3.3 Depletion Capacitance 95\u003c\/p\u003e \u003cp\u003e3.4 Current-Voltage Characteristics 99\u003c\/p\u003e \u003cp\u003e3.5 Charge Storage and Transient Behavior 108\u003c\/p\u003e \u003cp\u003e3.6 Junction Breakdown 111\u003c\/p\u003e \u003cp\u003e3.7 Heterojunction 117\u003c\/p\u003e \u003cp\u003eSummary 120\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 4 Bipolar Transistors and Related Devices 123\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e4.1 Transistor Action 124\u003c\/p\u003e \u003cp\u003e4.2 Static Characteristics of Bipolar Transistors 129\u003c\/p\u003e \u003cp\u003e4.3 Frequency Response and Switching of Bipolar Transistors 137\u003c\/p\u003e \u003cp\u003e4.4 Nonideal Effects 142\u003c\/p\u003e \u003cp\u003e4.5 Heterojunction Bipolar Transistors 146\u003c\/p\u003e \u003cp\u003e4.6 Thyristors and Related Power Devices 149\u003c\/p\u003e \u003cp\u003eSummary 155\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 5 MOS Capacitor and MOSFET 160\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e5.1 Ideal MOS Capacitor 160\u003c\/p\u003e \u003cp\u003e5.2 SiO\u003csub\u003e2\u003c\/sub\u003e-Si MOS Capacitor 169\u003c\/p\u003e \u003cp\u003e5.3 Carrier Transport in MOS Capacitors 174\u003c\/p\u003e \u003cp\u003e5.4 Charge-Coupled Devices 177\u003c\/p\u003e \u003cp\u003e5.5 MOSFET Fundamentals 180\u003c\/p\u003e \u003cp\u003eSummary 192\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 6 Advanced MOSFET and Related Devices 195\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e6.1 MOSFET Scaling 195\u003c\/p\u003e \u003cp\u003e6.2 CMOS and BiCMOS 205\u003c\/p\u003e \u003cp\u003e6.3 MOSFET on Insulator 210\u003c\/p\u003e \u003cp\u003e6.4 MOS Memory Structures 214\u003c\/p\u003e \u003cp\u003e6.5 Power MOSFET 223\u003c\/p\u003e \u003cp\u003eSummary 224\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 7 MESFET and Related Devices 228\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e7.1 Metal-Semiconductor Contacts 229\u003c\/p\u003e \u003cp\u003e7.2 MESFET 240\u003c\/p\u003e \u003cp\u003e7.3 MODFET 249\u003c\/p\u003e \u003cp\u003eSummary 255\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices 258\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e8.1 Microwave Frequency Bands 259\u003c\/p\u003e \u003cp\u003e8.2 Tunnel Diode 260\u003c\/p\u003e \u003cp\u003e8.3 IMPATT Diode 260\u003c\/p\u003e \u003cp\u003e8.4 Transferred-Electron Devices 265\u003c\/p\u003e \u003cp\u003e8.5 Quantum-Effect Devices 269\u003c\/p\u003e \u003cp\u003e8.6 Hot-Electron Devices 274\u003c\/p\u003e \u003cp\u003eSummary 277\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 9 Light Emitting Diodes and Lasers 280\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e9.1 Radiative Transitions and Optical Absorption 280\u003c\/p\u003e \u003cp\u003e9.2 Light-Emitting Diodes 286\u003c\/p\u003e \u003cp\u003e9.3 Various Light-Emitting Diodes 291\u003c\/p\u003e \u003cp\u003e9.4 Semiconductor Lasers 302\u003c\/p\u003e \u003cp\u003eSummary 319\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 10 Photodetectors and Solar Cells 323\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e10.1 Photodetectors 323\u003c\/p\u003e \u003cp\u003e10.2 Solar Cells 336\u003c\/p\u003e \u003cp\u003e10.3 Silicon and Compound-Semiconductor Solar Cells 343\u003c\/p\u003e \u003cp\u003e10.4 Third-Generation Solar Cells 348\u003c\/p\u003e \u003cp\u003e10.5 Optical Concentration 352\u003c\/p\u003e \u003cp\u003eSummary 352\u003c\/p\u003e \u003cp\u003e\u003cb\u003ePART III SEMICONDUCTOR TECHNOLOGY\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 11 Crystal Growth and Epitaxy 357\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e11.1 Silicon Crystal Growth from the Melt 357\u003c\/p\u003e \u003cp\u003e11.2 Silicon Float-Zone Proces 363\u003c\/p\u003e \u003cp\u003e11.3 GaAs Grystal-Growth Techniques 367\u003c\/p\u003e \u003cp\u003e11.4 Material Characterization 370\u003c\/p\u003e \u003cp\u003e11.5 Epitaxial-Growth Techniques 377\u003c\/p\u003e \u003cp\u003e11.6 Structures and Defects in Epitaxial Layers 384\u003c\/p\u003e \u003cp\u003eSummary 388\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 12 Film Formation 392\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e12.1 Thermal Oxidation 392\u003c\/p\u003e \u003cp\u003e12.2 Chemical Vapor Deposition of Dielectrics 400\u003c\/p\u003e \u003cp\u003e12.3 Chemical Vapor Deposition of Polysilicon 409\u003c\/p\u003e \u003cp\u003e12.4 Atom Layer Deposition 412\u003c\/p\u003e \u003cp\u003e12.5 Metallization 414\u003c\/p\u003e \u003cp\u003eSummary 425\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 13 Lithography and Etching 428\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e13.1 Optical Lithography 428\u003c\/p\u003e \u003cp\u003e13.2 Next-Generation Lithographic Methods 441\u003c\/p\u003e \u003cp\u003e13.3 Wet Chemical Etching 447\u003c\/p\u003e \u003cp\u003e13.4 Dry Etching 450\u003c\/p\u003e \u003cp\u003eSummary 462\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 14 Impurity Doping 466\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e14.1 Basic Diffusion Process 467\u003c\/p\u003e \u003cp\u003e14.2 Extrinsic Diffusion 476\u003c\/p\u003e \u003cp\u003e14.3 Diffusion-Related Processes 480\u003c\/p\u003e \u003cp\u003e14.4 Range of Implanted Ions 483\u003c\/p\u003e \u003cp\u003e14.5 Implant Damage and Annealing 490\u003c\/p\u003e \u003cp\u003e14.6 Implantation-Related Processes 495\u003c\/p\u003e \u003cp\u003eSummary 501\u003c\/p\u003e \u003cp\u003e\u003cb\u003eChapter 15 Integrated Devices 505\u003c\/b\u003e\u003c\/p\u003e \u003cp\u003e15.1 Passive Components 507\u003c\/p\u003e \u003cp\u003e15.2 Bipolar Technology 511\u003c\/p\u003e \u003cp\u003e15.3 MOSFET Technology 516\u003c\/p\u003e \u003cp\u003e15.4 MESFET Technology 529\u003c\/p\u003e \u003cp\u003e15.5 Challenges for Nanoelectronics 532\u003c\/p\u003e \u003cp\u003eSummary 537\u003c\/p\u003e \u003cp\u003eAPPENDIX A List of Symbols 541\u003c\/p\u003e \u003cp\u003eAPPENDIX B International Systems of Units (SI Units) 543\u003c\/p\u003e \u003cp\u003eAPPENDIX C Unit Prefixes 544\u003c\/p\u003e \u003cp\u003eAPPENDIX D Greek Alphabet 545\u003c\/p\u003e \u003cp\u003eAPPENDIX E Physical Constants 546\u003c\/p\u003e \u003cp\u003eAPPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K 547\u003c\/p\u003e \u003cp\u003eAPPENDIX G Properties of Si and GaAs at 300 K 548\u003c\/p\u003e \u003cp\u003eAPPENDIX H Derivation of the Density of States in a Semiconductor 549\u003c\/p\u003e \u003cp\u003eAPPENDIX I Derivation of Recombination Rate for Indirect Recombination 553\u003c\/p\u003e \u003cp\u003eAPPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode 555\u003c\/p\u003e \u003cp\u003eAPPENDIX K Basic Kinetic Theory of Gases 557\u003c\/p\u003e \u003cp\u003eAPPENDIX L Answers to Selected Problems 559\u003c\/p\u003e \u003cp\u003ePhoto Credits 563\u003c\/p\u003e \u003cp\u003eIndex 565\u003c\/p\u003e \u003cp\u003e\u003cb\u003eS. M. Sze\u003c\/b\u003e, PhD, is UMC Chair Professor in the Electronics Engineering Department at the National Chiao Tung University. His previous books include \u003ci\u003eSemiconductor Devices\u003c\/i\u003e; \u003ci\u003ePhysics of Semiconductor Devices\u003c\/i\u003e, Second Edition; \u003ci\u003eHigh-Speed Semiconductor Devices\u003c\/i\u003e; and \u003ci\u003eSemiconductor Sensors\u003c\/i\u003e, all available from Wiley.\u003c\/p\u003e \u003cp\u003e\u003cb\u003eMing-Kwei Lee,\u003c\/b\u003e Professor, Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan.\u003c\/p\u003e  \u003cp\u003eThis \u003cb\u003e\u003ci\u003eThird Edition\u003c\/i\u003e\u003c\/b\u003e of \u003cb\u003e\u003ci\u003eSemiconductor Devices\u003c\/i\u003e\u003c\/b\u003e offers revised material that reflects many important discoveries and advances in device physics and integrated circuit processing that have taken place over the last decade. \u003c\/p\u003e\u003cp\u003eOffering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the \u003cb\u003e\u003ci\u003eThird Edition\u003c\/i\u003e\u003c\/b\u003e presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.  \u003c\/p\u003e\u003cp\u003e\u003cb\u003eHALLMARK FEATURES:\u003c\/b\u003e \u003c\/p\u003e\u003cul\u003e \u003cli\u003eCovers all key semiconductor devices with up-to-date information and easy-to-understand descriptions.\u003c\/li\u003e \u003cli\u003eCoverage of basic physics and material properties of key semiconductors help students to easily understand the basic properties and offers access to the most up-to-date, accurate values of device\/material parameters.\u003c\/li\u003e \u003cli\u003eProvides coverage of all important processing technologies, offering students the opportunity to learn the basic process steps to fabricate various devices, especially integrated circuits.\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003e\u003cb\u003eALSO NEW TO THE THIRD EDITION:\u003c\/b\u003e \u003c\/p\u003e\u003cul\u003e \u003cli\u003eCoverage of MOSFETs and Photonic devices expanded to 2 chapters each\u003c\/li\u003e \u003cli\u003eAll technology chapters have been thoroughly updated\u003c\/li\u003e \u003cli\u003eMany more worked-out examples and end-of-chapter problems have been added\u003c\/li\u003e \u003c\/ul\u003e \u003cp\u003e\u003cb\u003eDESCRIPTION OF THE COVER ILLUSTRATION\u003c\/b\u003e  \u003c\/p\u003e\u003cp\u003eThe illustration shows a bird's-eye view of a 3-dimensional floating-gate non-volatile semiconductor memory (NVSM). NVSM is the foundation technology of information storage for all modern electronic systems (e.g., the digital cellular phone, digital camera, personal digital assistant, and global positioning system). NVSM has ushered in the \"Digital Age\", and pushed forward the electronics industry to become the largest industry in the world. \u003c\/p\u003e\u003cp\u003eThe device shown has a surrounding floating gate (the central circular section) and two control gates (the upper and lower rectangular sections). The device is a promising candidate for 1 tera-bit (1012 bits) and beyond NVSM chips. Courtesy of the Institute of Electrical and Electronics Engineers (IEEE) and S. Whang et al of Hynix Semiconductor Inc. (IEEE IEDM Technical Digest, p. 668, 2010). \u003c\/p\u003e\u003cp\u003eFor a discussion of NVSM and other semiconductor memories, see Chapter 6.\u003c\/p\u003e","brand":"Wiley","offers":[{"title":"Default Title","offer_id":47990005956837,"sku":"NP9780470537947","price":194.0,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/1842\/7735\/files\/9780470537947.jpg?v=1761786187","url":"https:\/\/k12savings.com\/es\/products\/semiconductor-devices-isbn-9780470537947","provider":"K12savings","version":"1.0","type":"link"}