Semiconductor Device and Failure Analysis

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.Integrierte Schaltkreise werden immer komplexer - deshalb wird es zunehmend schwieriger, Fehler schnell und treffsicher aufzuspüren. Die Photonenemissionsmikroskopie (PEM) ist eine Analysetechnik auf physikalischer Grundlage, die sich als Fehlererkennungsmethode bewährt hat. Dieser Band erläutert alle Aspekte dieser Methode, von der instrumentellen Ausrüstung über spezifische Details der Mikroskope bis hin zu Merkmalen der Photonenemission unter verschiedenen Bedingungen. (11/00) Preface.

Introduction.

Theory of Light Emission in Semiconductors.

Instrumentation Aspects of the Photon Emission Microscope.

Backside Photon Emission Microscopy.

Spectroscopic Photon Emission Microscopy.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing.

Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures.

Index. "This reference details the principles of design, calibration, and use of photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure." (SciTech Book News Vol. 25, No. 2 June 2001)

Wai Kin Chim is the author of Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy , published by Wiley. The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.