Electromigration and Electronic Device Degradation

Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI. Reliability and Electromigration Degradation of GaAs MicrowaveMonolithic Integrated Circuits (A. Christou).

Simulation and Computer Models for Electromigration (P.Tang).

Temperature Dependencies on Electromigration (M. Pecht & P.Lall).

Electromigration and Related Failure Mechanisms in VLSIMetallizations (A. Christou & M. Peckerar).

Metallic Electromigration Phenomena (S. Krumbein).

Theoretical and Experimental Study of Electromigration (J.Zhao).

GaAs on Silicon Performance and Reliability (P. Panayotatos, etal.).

Electromigration and Stability of Multilayer Metal-SemiconductorSystems on GaAs (A. Christou).

Electrothermomigration Theory and Experiments in Aluminum Thin FilmMetallizations (A. Christou).

Reliable Metallization for VLSI (M. Peckerar).

Index.

Aris Christou is the author of Electromigration and Electronic Device Degradation, published by Wiley.