{"product_id":"crystal-growth-technology-isbn-9780471495246","title":"Crystal Growth Technology","description":"This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production.\u003cbr\u003e \u003cbr\u003e The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more.\u003cbr\u003e \u003cbr\u003e Contains 29 contributions from leading crystal technologists covering the following topics:\u003cbr\u003e * General aspects of crystal growth technology\u003cbr\u003e * Silicon\u003cbr\u003e * Compound semiconductors\u003cbr\u003e * Oxides and halides\u003cbr\u003e * Crystal machining\u003cbr\u003e * Epitaxy and layer deposition\u003cbr\u003e \u003cbr\u003e Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers.\u003cbr\u003e \u003cbr\u003e In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.Technologische Ansätze zum Aufwachsen von Kristallen gewinnen in vielen Industriezweigen an Bedeutung. Jetzt liegt erstmals ein Buch vor, das in der Literatur verstreute Informationen zu wissenschaftlichen Grundlagen und technischer Umsetzung des Kristallwachstums sammelt und diskutiert. Contributors.\u003cbr\u003e \u003cbr\u003e Preface.\u003cbr\u003e \u003cbr\u003e PART 1: GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY.\u003cbr\u003e \u003cbr\u003e 1. The Development of Crystal Growth Technology (H. J. ScheelI).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 2. Thermodynamic Fundamentals of Phase Transitions Applied to Crystal Growth Processes (P. Rudolph).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 3. Interface-kinetics-driven Facet Formation During Melt Growth of Oxide Crystals (S. Brandon, A. Virozub and Y. Liu).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e Note Added in Proof.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 4. Theoretical and Experimental Solutions of the Striation Problem (H. J. Scheel).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 5. High-resolution X-Ray Diffraction Techniques for Structural Characterization of Silicon and other Advanced Materials (K. Lal).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 6. Computational Simulations of the Growth of Crystals from Liquids (A. Yeckel and J. J. Derby).\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 7. Heat and Mass Transfer under Magnetic Fields (K. Kakimoto).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgment.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 8. Modeling of Technologically Important Hydrodynamics and Heat\/Mass Transfer Processes during Crystal Growth (V. I. Polezhaev).\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e PART 2: SILICON.\u003cbr\u003e \u003cbr\u003e 9. Influence of Boron Addition on Oxygen Behavior in Silicon Melts (K. Terashima).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 10. Octahedral Void Defects in Czochralski Silicon (M. Itsumi).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 11. The Control and Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals (R. Falster, V. V. Voronkov and P. Mutti).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 12. The Formation of Defects and Growth Interface Shapes in CZ Silicon (T. Abe).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 13. Silicon Crystal Growth for Photovoltaics (T. F. Ciszek).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e PART 3: COMPOUND SEMICONDUCTORS.\u003cbr\u003e \u003cbr\u003e 14. Fundamental and Technological Aspects of Czochralski Growth of High-quality Semi-insulating GaAs Crystals (P. Rudolph and M. Jurisch).\u003cbr\u003e \u003cbr\u003e Acknowledgement.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 15. Growth of III-V and II-VI Single Crystals by the Verticalgradient-freeze Method (T. Asahi, K. Kainosho, K. Kohiro, A. Noda, K. Sato and O. Oda).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 16. Growth Technology of III-V Single Crystals for Production (T. Kawase, M. Tatsumi and Y. Nishida).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 17. CdTe and CdZnTe Growth (R. Triboulet).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e PART 4: OXIDES AND HALIDES.\u003cbr\u003e \u003cbr\u003e 18. Phase-diagram Study for Growing Electro-optic Single Crystals (S. Miyazawa).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgment.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 19. Melt Growth of Oxide Crystals for SAW, Piezoelectric, and Nonlinear-Optical Applications (K. Shimamura, T. Fukuda and V. I. Chani).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 20. Growth of Nonlinear-optical Crystals for Laser-frequency Conversion (T. Sasaki, Y. Mori and M. Yoshimura).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 21. Growth of Zirconia Crystals by Skull-Melting Technique (E. E. Lomonova and V. V. Osiko).\u003cbr\u003e \u003cbr\u003e Acknowledgments.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 22. Shaped Sapphire Production (L. A. Lytvynov).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 23. Halogenide Scintillators: Crystal Growth and Performance (A. V. Gektin and B. G. Zaslavsky).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e PART 5: CRYSTAL MACHINING.\u003cbr\u003e \u003cbr\u003e 24. Advanced Slicing Techniques for Single Crystals (C. Hauser and P. M. Nasch).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 25. Methods and Tools for Mechanical Processing of Anisotropic Scintillating Crystals (M. Lebeau).\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 26. Plasma-CVM (Chemical Vaporization Machining) (Y. Mori, K. Yamamura, and Y. Sano).\u003cbr\u003e \u003cbr\u003e Acknowledgements.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 27. Numerically Controlled EEM (Elastic Emission Machining) System for Ultraprecision Figuring and Smoothing of Aspherical Surfaces (Y. Mori, K. Yamauchi, K. Hirose, K. Sugiyama, K. Inagaki and H. Mimura).\u003cbr\u003e \u003cbr\u003e Acknowledgement.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e PART 6: EPITAXY AND LAYER DEPOSITION.\u003cbr\u003e \u003cbr\u003e 28. Control of Epitaxial Growth Modes for High-performance Devices (H. J. Scheel).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e General References.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e 29. High-rate Deposition of Amorphous Silicon Films by Atmospheric pressure Plasma Chemical Vapor Deposition (Y. Mori, H. Kakiuchi, K. Yoshii and K. Yasutake).\u003cbr\u003e \u003cbr\u003e Abstract.\u003cbr\u003e \u003cbr\u003e Acknowledgements.\u003cbr\u003e \u003cbr\u003e References.\u003cbr\u003e \u003cbr\u003e Index. \u003cp\u003e\u003cb\u003eHans J. Scheel\u003c\/b\u003e started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.\u003c\/p\u003e \u003cp\u003e\u003cb\u003eTsuguo Fukuda\u003c\/b\u003e is the editor of \u003ci\u003eCrystal Growth Technology\u003c\/i\u003e, published by Wiley.\u003c\/p\u003e This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. Highest-quality crystals and epitaxical layers form the base for many of industries technological advances, including telecommunication, computer and electric energy technology, and those technologies based on lasers and nonlinear-optic crystals. Furthermore, automobile electronics, audiovisual equipment and infrared night-vision all depend on high-quality crystals and epilayers, as do novel technologies currently in development and planned for the future.\u003cbr\u003e \u003cbr\u003e This book contains 29 contributions of leading crystal technologists covering the following topics:\u003cbr\u003e * General aspects of crystal growth technology\u003cbr\u003e * Silicon\u003cbr\u003e * Compound semiconductors\u003cbr\u003e * Oxides and halides\u003cbr\u003e * Crystal machining\u003cbr\u003e * Epitaxy and layer deposition\u003cbr\u003e \u003cbr\u003e Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of the m from the major growth industries and crystal growth centres.\u003cbr\u003e \u003cbr\u003e It is anticipated that this volume will serve all scientists and engineers involved in crystal and epilayer fabrication. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences. Also consultants and specialists will profit from this book, as will those interested in crystals, epilayers, and their production for saving energy (GaN- and SiC-based high-power electronics and light-emitting diodes for illumination) and for renewable energy sources (economic high-efficiency solar cells and forthcoming laser-fusion energy).","brand":"Wiley","offers":[{"title":"Default Title","offer_id":47989010333925,"sku":"NP9780471495246","price":213.95,"currency_code":"USD","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/1842\/7735\/files\/9780471495246.jpg?v=1761782421","url":"https:\/\/k12savings.com\/es\/products\/crystal-growth-technology-isbn-9780471495246","provider":"K12savings","version":"1.0","type":"link"}