MOS (Metal Oxide Semiconductor) Physics and Technology

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. Introduction.

Field Effect.

Metal Oxide Silicon Capacitor at Low Frequencies.

Metal Oxide Silicon Capacitor at Intermediate and High Frequencies.

Extraction of Interface Trap Properties from the Conductance.

Interfacial Nonuniformities.

Experimental Evidence for Interface Trap Properties.

Extraction of Interface Trap Properties from the Capacitance.

Measurement of Silicon Properties.

Charges, Barrier Heights, and Flatband Voltage.

Charge Trapping in the Oxide.

Instrumentation for Measuring Capacitor Characteristics.

Oxidation of Silicon--Oxidation Kinetics.

Oxidation of Silicon--Technology.

Control of Oxide Charges.

Models of the Interface.

Appendices.

Subject Index.

Symbol Index.

E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.

John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ. The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.